Design Analysis of 1550-nm GaAsSb–(In)GaAsN Type-II Quantum-Well Laser Active Regions

Characteristics of GaAsN/GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates

Pseudomorphic four-period GaAs0.978N0.022/GaAs0.78Sb0.22 type-II multiquantum well structures were grown on 100 GaAs substrates by metalorganic vapor phase epitaxy at 530 °C. The GaAs0.978N0.022 layers were grown at a V/III ratio of 685 and N/V ratio of 0.96, whereas the GaAs0.78Sb0.22 was grown at a V/III ratio of 3.8 and Sb/V ratio of 0.8. The superlattice peaks in the x-ray diffraction -2 sc...

Suppression of spatial hole burning and pulse stabilization for actively modelocked quantum cascade lasers using quantum coherent absorption

Related Articles Design and modeling of InP-based InGaAs/GaAsSb type-II “W” type quantum wells for mid-Infrared laser applications J. Appl. Phys. 113, 043112 (2013) Analysis of perturbations in the lateral far-field of blue InGaN laser diodes Appl. Phys. Lett. 102, 043504 (2013) In-depth analysis of injection-seeded long external cavity InGaN/GaN surface-emitting laser J. Appl. Phys. 113, 04310...

Design and modeling of InP-based InGaAs/GaAsSb type-II “W” type quantum wells for mid-Infrared laser applications

[111]B-oriented GaAsSb grown by gas source molecular beam epitaxy

We report the GaAsSb bulk layers and GaAsSb/GaAs quantum wells (QWs) grown on (1 1 1)B GaAs substrates by gas source molecular beam epitaxy. We found that Sb composition in the GaAsSb epilayers is very sensitive to the substrate temperature. The composition drops from 0.35 to 0.16 as the substrate temperature increases from 450 to 550 1C. The [1 1 1]B-oriented GaAsSb epilayers show phase separa...

InAs/GaAsSb quantum dot solar cells.

The hybrid structure of GaAs/GaAsSb quantum well (QW)/InAs quantum dots solar cells (QDSCs) is analyzed using power-dependent and temperature-dependent photoluminescence. We demonstrate that placing the GaAsSb QW beneath the QDs forms type-II characteristics that initiate at 12% Sb composition. Current density-voltage measurements demonstrate a decrease in power efficiency with increasing Sb co...